1 2 pin 16.5 0.3 10.2 0.2 15.2 0.5 4.0 0.3 13.5 0.5 5.0 0.1 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 .1 ?3.20.2 8.2 0.2 2.6 0.2 0.6 0.1 f e a t u r e s m e t a l - s e m i c o n d u c t or j u n c t i o n w i t h g u a r d r i n g ito-220ac epitaxial construction low forward voltage drop,low switching losses high surge capability mechanical data c a s e : j e d e c ito-220ac , m o l d ed p l a s t i c t e r m i n a l s : s o l d e r a b l e per mil- std-750,method 2026 polarity: as marked w e i g h t : 0.056 ounces,1.587 gram mounting position: any ratings at 25 ambient temperature unless otherwise specified. s i n g l e p h a s e , h a l f w a v e , 6 0 h z , r e s i s t i v e o r i n du c t i v e l o a d . f o r c a p a c i t i v e l o a d , d e r a te b y 2 0 % . s blf sbl f sbl f sbl f sbl f sbl f sbl f sbl f 5 3 0 535 540 545 550 560 580 5100 u n i t s maximum recurrent peak reverse voltage v r r m v ma x imu m rms v o l t a g e v r m s v ma x imu m dc bl oc ki ng v o lt a g e v dc v maximum average f orw ard rectified current t c =95 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load t j =125 maximum instantaneous forw ard voltage @ 5.0 a v f v maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 0 0 t y p i c a l t he r m a l r e s i s t a n c e ( n o t e 1 ) r jc /w operating junction temperature range t j storage temperature range t stg n o t e: 1 . thermal resistance junction to case. - 5 5 - -- + 1 50 30 35 40 45 50 60 80 100 i fsm 30 35 40 45 50 60 80 100 21 2 5 28 32 35 42 56 70 ma i r 0.5 a - 5 5 - -- + 1 5 0 3.0 0 . 55 0.70 0.85 175 33 s bl f 53 0 - - - s bl f 5100 a for use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications i f(av) s c h o tt k y b arr i e r r e c t i fi e r s v o l t a g e r a nge: 3 0 - - - 10 0 v curr e n t : 5.0 a the plastic material carries u/l recognition 94v-0 5.0 maximum ratings and electrical characteristics dimensions in millimeters diode semiconductor korea www.diode.kr
t j =25 pulse width=300 s 1 % d u ty c ycle . 2 . 4 . 6 . 8 1.0 1 . 2 1 . 4 1 . 6 1 . 8 2.0 2.2 1 1 0 1 0 0 2 0 0 SBLF530-sblf545 sblf550-sblf560 sblf580-sblf5100 10 04060 20 100 120 140 80 t c = 2 5 . 1 1 . 0 1 tc=100 0 1.0 2.0 25 50 75 100 125 150 3.0 4.0 5.0 0 40 1 100 200 80 12 0 160 10 8.3ms single half sine wave t j =125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes mi ll amperes percent of rated peak reverse voltage fi g. 1 -- peak forward surge current instantaneous reverse current, 175 SBLF530 - - - sblf5100 www.diode.kr diode semiconductor korea
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